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DOI:10.1063/1.1769595 - Corpus ID: 122985102
@article{Lee2004CarbonNP, title={Carbon nanotube p-n junction diodes}, author={Ji Ung Lee and P. P. Gipp and Christian Maria Anton Heller}, journal={Applied Physics Letters}, year={2004}, volume={85}, pages={145-147}, url={https://api.semanticscholar.org/CorpusID:122985102}}- J. U. Lee, P. Gipp, C. A. Heller
- Published 29 June 2004
- Physics, Engineering, Materials Science
- Applied Physics Letters
We demonstrate a single-walled carbon nanotube p-n junction diode device. The p-n junction is formed along a single nanotube by electrostatic doping using a pair of split gate electrodes. By biasing the two gates accordingly, the device can function either as a diode or as an ambipolar field-effect transistor. The diode current–voltage characteristics show forward conduction and reverse blocking characteristics, i.e., rectification. For low bias conditions, the characteristics follow the ideal…
237 Citations
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237 Citations
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Engineering, Physics
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Physics, Engineering
Single-walled carbon nanotube diodes are fabricated in a split-gate geometry with electron (n) and hole (p) regions separated by a central region. With the central region gated p or n type the diodes…
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Engineering, Materials Science
ACS nano
Two terminal abrupt junction diodes are fabricated from single semiconducting carbon nanotubes with simple photopatterned polymer layers defining air-stable p- and n-regions. These intratube diodes…
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Physics, Materials Science
We demonstrate that individual single-walled carbon nanotubes (SWNTs) can form ideal p-n junction diodes. An ideal behavior is the theoretical limit of performance for any diode, a highly sought…
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Engineering, Materials Science
Nanotechnology
Experimental results supported the opinion that the gate voltage dependent property is derived from the Schottky barrier between the CN(x) part and the electrode.
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Engineering, Physics
A carbon nanotube (CNT) Schottky diode based on coaxial geometry is presented. We show that coaxially gated CNT field effect transistors (FETs) with a p-type semiconducting single-walled carbon…
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Engineering, Physics
We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using a Pd contact (high-work-function metal) and an Al contact (low-work-function metal) at the two…
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Engineering, Materials Science
IEEE Transactions on Nanotechnology
The p-n junction diodes are formed by electrostatic doping using two gate electrodes positioned beneath individual, suspended single-walled carbon nanotubes (CNTs). These devices exhibit nearly ideal…
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The results suggest that a tunable nanotube diode can be a unique building block for developing next generation programmable nanoelectronic logic and integrated circuits.
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Engineering, Materials Science
A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10−16 A, and an…
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